Title:
電力用半導体スイッチのゲート駆動回路
Document Type and Number:
Japanese Patent JP4080129
Kind Code:
B2
Abstract:
A gate driving circuit for power semiconductor switch including a DC voltage source (11) whose positive output terminal is connected to a cathode (K) of a power semiconductor switch (12), a series circuit of a reactor (14) and a turn-on switching element (13) connected across the positive output terminal of the DC voltage source (11) and a gate (6) of the power semiconductor switch (12), a turn-off switching element (16) connected across the gate (6) of the power semiconductor switch (12) and a negative output terminal of the DC voltage source (11), a freewheel diode (17) connected across the negative output terminal of the DC voltage source (11) and a junction point between the turn-on switching element (16) and the reactor (14), and a control circuit (18) for controlling the turn-on and turn-off switching elements (13,16) such that the power semiconductor switch (12) is kept non-conductive by making the turn-on and turn-off switching elements (13,16) in off-state and in on-state, respectively, upon turning-on the power semiconductor switch (12), after storing energy in said reactor (14) by changing the turn-on switching element (13) from off-state into on-state, the turn-off switching element (16) is changed into the off-state to discharge the energy stored in the reactor (14) abruptly into the gate of the power semiconductor switch (12).
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Inventors:
Ken Sakuma
Katsuji Iida
Katsuji Iida
Application Number:
JP2000058216A
Publication Date:
April 23, 2008
Filing Date:
March 03, 2000
Export Citation:
Assignee:
Nippon Insulator Co., Ltd.
International Classes:
H02M1/08; H03K17/04
Domestic Patent References:
| JP56043829A | ||||
| JP62135258A |
Attorney, Agent or Firm:
Kosaku Sugimura