Title:
半導体装置及び半導体記憶装置の製造方法
Document Type and Number:
Japanese Patent JP4128737
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing a semiconductor storage device wherein the finer work of a contact hole can be realized without causing complication of manufacturing processes. SOLUTION: A polycrystalline silicon film 24 turning to first mask material and resist 26 turning to second mask material are patterned in line and space patterns which intersect perpendicularly with each other. A region on which space patterns of both of the mask material 24, 26 are intersected is etched, and a contact hole is formed. Before the first mask material 24 is eliminated, the contact hole is filled with a material identical to the first mask material 24. After that, formation of a contact plug and elimination of the first mask material are performed in the same etching process.
Inventors:
Kikuko Sugimae
Riichiro Shirata
Masayuki Ichige
Riichiro Shirata
Masayuki Ichige
Application Number:
JP2000347059A
Publication Date:
July 30, 2008
Filing Date:
November 14, 2000
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/8247; H01L21/768; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
| JP62102531A | ||||
| JP2001223155A | ||||
| JP10232496A |
Attorney, Agent or Firm:
Takehiko Suzue
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai
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