Title:
放射線検出素子
Document Type and Number:
Japanese Patent JP4138143
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To reduce junction defect between respective layers by employing a material having a grating constant close to that of a radiation detecting layer in p layer and n layer constituting a radiation detecting element. SOLUTION: A radiation detecting layer 11 is formed of a single crystal Cd0.9Zn0.1Te of 1 mm thick having resistivity of 1010 Ω.cm and the upper surface thereof is doped with p type impurities of form a p type Cd0.9Zn0.1Te layer 13 while the lower surface thereof is doped with n type impurities to form an n type CdSe0.1Te0.9 layer 15. Since the Cd0.9Zn0.1Te forming the radiation detecting layer 11 and the CdSe0.1Te0.9 have grating constants close to each other, junction defect due to difference of grating constant can be reduced by forming the n layer of CdSe0.1Te0.9 and forming the p layer of same material as the radiation detecting layer 11. Consequently, leak current of a radiation detecting element 10 can be suppressed significantly as compared with a radiation detecting element 10 having neither p layer nor n layer.
Inventors:
Hatanaka rite
Yasuhiro Tomita
Yasuhiro Tomita
Application Number:
JP8384899A
Publication Date:
August 20, 2008
Filing Date:
March 26, 1999
Export Citation:
Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
H01L31/09; H01L27/14
Attorney, Agent or Firm:
Yoshiki Hasegawa
Tatsuya Shioda
Shiro Terasaki
Tatsuya Shioda
Shiro Terasaki