半導体集積回路装置の製造方法

Title:

半導体集積回路装置の製造方法

Document Type and Number:

Japanese Patent JP4142664

Kind Code:

B2

Abstract:

To keep oxide contamination on a substrate surface prior to ion implantation at a low level, after a polymetal gate has been processed.

Gate electrodes 7A, 7B, and 7C that include a tungsten (W) film are formed, followed by being subjected to re-oxidation a treatment on condition that the tungsten film is not practically oxidized. In succession, after the main surface of a substrate 1 has been wet-cleaned, by using a neutral or mildly alkaline water solution that does not practically contain hydrogen peroxide, impurities are ion-implanted to the main surface of the substrate 1.

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Inventors:

Naoki Yamamoto
Hiroyuki Uchiyama
Norio Suzuki
Eisuke Nishitani
Shinichiro Kimura
Kazuyuki Parkzawa

Application Number:

JP2005104585A

Publication Date:

September 03, 2008

Filing Date:

March 31, 2005

Export Citation:

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Assignee:

Renesas Technology Corp.

International Classes:

H01L21/28; H01L21/3205; H01L21/8238; H01L21/8242; H01L21/8247; H01L23/52; H01L27/092; H01L27/108; H01L27/115; H01L29/423; H01L29/49; H01L29/788; H01L29/792

Domestic Patent References:

JP9266178A
JP10335652A
JP10223900A
JP2000331978A
JP11330468A
JP11204456A
JP7094731A
JP3147328A
JP2000349285A

Attorney, Agent or Firm:

Yamato Tsutsui

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