Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4146121
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method remarkably improving cost performance of the semiconductor device by applying an oxygen ion injection process and an annealing process to the manufacturing method of the semiconductor device. SOLUTION: A plurality of MOSFETs and an element separation area are constructed by a new manufacturing method using oxygen implantation, and a semiconductor integrated circuit device superior in performance is constituted.
Inventors:
Kazutoshi Ishii
Application Number:
JP2001371863A
Publication Date:
September 03, 2008
Filing Date:
December 05, 2001
Export Citation:
Assignee:
Seiko Instruments Inc.
International Classes:
H01L21/265; H01L21/8247; H01L21/8234; H01L21/8238; H01L27/08; H01L27/088; H01L27/092; H01L27/10; H01L27/115; H01L29/78; H01L29/788; H01L29/792
Domestic Patent References:
| JP5152568A | ||||
| JP2000101092A | ||||
| JP63502390A | ||||
| JP1128571A | ||||
| JP4093037A | ||||
| JP2091973A |
Attorney, Agent or Firm:
Yoshiharu Matsushita