Title:
半導体デバイス形成方法
Document Type and Number:
Japanese Patent JP4180145
Kind Code:
B2
Abstract:
A refractory Metal Nitride and a refractory metal Silicon Nitride layer (64) can be formed using metal organic chemical deposition. More specifically, tantalum nitride (TaN) (64) can be formed by a Chemical Vapor Deposition (CVD) using Ethyltrikis (Diethylamido) Tantalum (ETDET) and ammonia (NH3). By the inclusion of silane (SiH4), tantalum silicon nitride (TaSiN) (64) layer can also be formed. Both of these layers can be formed at wafer temperatures lower than approximately 400 INFINITY C with relatively small amounts of carbon (C) within the film. Therefore, the embodiments of the present invention can be used to form tantalum nitride (TaN) or tantalum silicon nitride (TaSiN) (64) that is relatively conformal and has reasonably good diffusion barrier properties.
Inventors:
Ajay Jane
Elizabeth Waitsman
Elizabeth Waitsman
Application Number:
JP10568398A
Publication Date:
November 12, 2008
Filing Date:
March 31, 1998
Export Citation:
Assignee:
Freescale Semiconductor, Inc.
International Classes:
H01L21/285; C23C16/34; H01L21/205; H01L21/28; H01L21/3205; H01L21/768; H01L23/52
Domestic Patent References:
| JP62188268A | ||||
| JP10209081A | ||||
| JP9260306A | ||||
| JP10209073A |
Attorney, Agent or Firm:
Yoshiaki Ikeuchi
Mamoru Kuwagaki
Mamoru Kuwagaki