Title:
固体撮像装置の製造方法。
Document Type and Number:
Japanese Patent JP4191817
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a solid-state image-pickup device and a method for manufacturing the same, capable of providing a reduced dark current effect obtained from a hydrogen treatment effect on a wiring region and preventing image defects due to increased noise on a peripheral section of an image. SOLUTION: An image-pickup region formed by a photo diode 1, a vertical transfer channel 2, and a vertical transfer electrode 98 on it, and a wiring region formed by a wiring 6 for applying a vertical transfer electrode voltage formed at the periphery of the image-pickup region are provided on an N-type silicon wafer 11. A silicon film nitride 16 formed between the N-type silicon substrate 11 and the vertical transfer electrode 9 in the image-pickup region and no silicon film nitride 16 formed between the N-type silicon substrate 11 and the vertical transfer electrode 9 in the wiring region make it possible to provide a reduced dark current effect which is obtained from a hydrogen treatment effect on a wiring region and prevent an image defects caused by increased noise on a peripheral section of an image.
Inventors:
Yoshiaki Kato
Application Number:
JP19397498A
Publication Date:
December 03, 2008
Filing Date:
July 09, 1998
Export Citation:
Assignee:
Panasonic Corporation
International Classes:
H01L27/148; H01L27/14; H01L31/10; H04N5/335; H04N5/361; H04N5/369; H04N5/3722; H04N5/3725; H04N5/3728
Domestic Patent References:
| JP9331055A | ||||
| JP7202159A | ||||
| JP10112532A | ||||
| JP7094692A | ||||
| JP60035568A |
Attorney, Agent or Firm:
Hiroyuki Ikeuchi
Kimihiro Sato
Kimihiro Sato