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Title:
ビット線構造およびその製造方法
Document Type and Number:
Japanese Patent JP4195058
Kind Code:
B2
Abstract:
The disclosure relates to a bit line structure and an associated production method for the bit line structure. In the bit line structure, at least in a region of a second contact and a plurality of first contact adjoining the latter, an isolation trench is filled with an electrically conductive trench filling layer. The isolation trench connects to the first doping regions adjoining the second contact for the purpose of realizing a buried contact bypass line.

Inventors:
Ronald Kakoshke
Schuler, Franz
Georg, Tempel
Application Number:
JP2006508294A
Publication Date:
December 10, 2008
Filing Date:
April 14, 2004
Export Citation:
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Assignee:
Infineon Technologies AG
International Classes:
H01L21/8247; H01L21/3205; H01L21/768; H01L21/8246; H01L23/52; H01L23/522; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
JP2004514301A
JP2003508873A
JP2002026149A
JP11330426A
JP10092962A
Attorney, Agent or Firm:
Kenzo Hara International Patent Office