Title:
気相成長装置
Document Type and Number:
Japanese Patent JP4216541
Kind Code:
B2
Abstract:
A vapor-phase growth apparatus includes: at least a reaction furnace which is hermetically closable, a wafer container which is disposed in the reaction furnace, for disposing a wafer at a predetermined position, a gas supply member for supplying a source gas toward the wafer, and a heating member for heating the wafer, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying the source gas in a high temperature state while the heating member heats the wafer in the reaction furnace through the wafer container. The wafer container is made of a single material or a single member, and has a ratio R2/R1, which is not less than 0.4 to not more than 1.0, where R1 is a heat resistance for a heat transfer route from a rear surface of the wafer container toward the front surface of the wafer, and R2 is a heat resistance for a heat transfer route from the rear surface of the wafer container toward a front surface of the wafer container.
Inventors:
Eiichi Shimizu
Shuji Makino
Shuji Makino
Application Number:
JP2002238035A
Publication Date:
January 28, 2009
Filing Date:
August 19, 2002
Export Citation:
Assignee:
Nikko Metal Co., Ltd.
International Classes:
C23C16/44; H01L21/205; C23C16/458; C30B25/10; C30B25/12
Domestic Patent References:
| JP55121649A | ||||
| JP1116991A |
Attorney, Agent or Firm:
Hiroshi Arafune