Title:
III-V族化合物半導体層の成長方法および半導体発光素子の製造方法
Document Type and Number:
Japanese Patent JP4241051
Kind Code:
B2
Abstract:
A method for producing a III-V group compound semiconductor layer comprises the steps of: forming a first III-V group compound semiconductor layer on a substrate in a reaction chamber; and supplying a III group material gas to the reaction chamber before or after the step of forming the first III-V group compound semiconductor layer to prevent re-evaporation of the III group gas in the reaction chamber.
Inventors:
Junichi Nakamura
Kazuaki Sasaki
Kazuaki Sasaki
Application Number:
JP2003002614A
Publication Date:
March 18, 2009
Filing Date:
January 08, 2003
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L21/205; C30B25/02; C30B29/40; H01L33/10; H01L33/12; H01L33/30; H01S5/323
Domestic Patent References:
| JP5082910A | ||||
| JP5198510A | ||||
| JP8045855A | ||||
| JP3235327A | ||||
| JP4139816A | ||||
| JP8083770A |
Attorney, Agent or Firm:
Hidesaku Yamamoto
Takaaki Yasumura
Takeshi Oshio
Takaaki Yasumura
Takeshi Oshio
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