Title:
半導体発光素子
Document Type and Number:
Japanese Patent JP4246242
Kind Code:
B2
Abstract:
A semiconductor laser device comprises an n-type cladding layer, a p-type cladding layer, and an active layer which is sandwiched between the n-type cladding layer and the p-type cladding layer. The p-type cladding layer contains magnesium as a dopant impurity. Further, an n-type diffusion blocking layer of a nitride compound semiconductor material located between the active layer and the p-type cladding layer and is InxAlyGa1-x-yN, where x≧0, y≧0, and (x+y)<1. The n-type diffusion blocking layer preferably has a concentration of a dopant impurity producing n-type conductivity in a range from 5×1017 cm−3 to 5×1019 cm−3.
Inventors:
Akihito Ohno
Takemi Masayoshi
Nobuyuki Tomita
Takemi Masayoshi
Nobuyuki Tomita
Application Number:
JP2007217511A
Publication Date:
April 02, 2009
Filing Date:
August 23, 2007
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01S5/343
Domestic Patent References:
| JP2006049622A | ||||
| JP2004327636A | ||||
| JP10200214A | ||||
| JP11251687A | ||||
| JP9129926A | ||||
| JP10321942A |
Attorney, Agent or Firm:
Mamoru Takada
Hideki Takahashi
Hideki Takahashi