Title:
炭化珪素粉末とそれを用いた複合材料およびそれらの製造方法
Document Type and Number:
Japanese Patent JP4314675
Kind Code:
B2
Abstract:
A highly heat-conductive silicon carbide powder particularly useful for manufacturing heat-dissipating substrates and other members for semiconductor devices, and a silicon carbide-based composite material made with the silicon carbide powder. The silicon carbide powder is characterized in that the summation of the peak intensities of X-ray diffraction peaks obtained on the (101), (102), (103), (104), and (110) planes of 6H-type crystal grains in the range of Bragg angle 2 THETA from 30 to 61 degrees in the X-ray diffraction chart is 90% or more of the summation of the peak intensities of all the X-ray diffraction peaks in the same range of Bragg angle as above when tested by using the CuK alpha line. The silicon carbide-based composite material is obtained by compounding the silicon carbide powder with a metal powder such as an aluminum powder. The silicon carbide powder is obtained by the following method: First, a silicon carbide material powder is prepared. Second, a seed crystal powder, having an average particle diameter larger than that of the silicon carbide material powder, containing 98% or more 6H-type crystal particles is added to the silicon carbide material powder to prepare a mixed powder. Finally, the mixed powder is heat-treated at 1,800 DEG C or higher in an inert gas.
Inventors:
Chihiro Kawai
Application Number:
JP14902699A
Publication Date:
August 19, 2009
Filing Date:
May 28, 1999
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
C01B31/36; H01L23/15; C22C29/06; C22C32/00; H01L23/373
Domestic Patent References:
| JP7053265A | ||||
| JP10280082A | ||||
| JP10335538A | ||||
| JP2000281447A |
Attorney, Agent or Firm:
Minoru Nakano