Title:
成膜方法及び成膜装置
Document Type and Number:
Japanese Patent JP4329171
Kind Code:
B2
Abstract:
A deposition method for supplying process gases into an evacuated processing vessel to deposit a metal tungsten film on the surface of an object to be processed. The processing gases include tungsten hexafluoride gas, hydrogen gas, and a reducing gas which has a richer reducing property than that of the hydrogen gas, the amount of the reducing gas being smaller than that of the hydrogen gas. Thus, it is possible to form a metal tungsten film without increasing stress in the film so much even in a low temperature region of about 400° C. and without decreasing a deposition rate so much.
Inventors:
Nasu Katsuyuki
Sakae Nakatsuka
Sakae Nakatsuka
Application Number:
JP20099999A
Publication Date:
September 09, 2009
Filing Date:
July 14, 1999
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
C23C16/08; C23C14/14; H01L21/3205; C23C16/14; H01L21/28; H01L21/285
Domestic Patent References:
| JP4064223A | ||||
| JP3223462A | ||||
| JP7297151A | ||||
| JP6163518A | ||||
| JP4335526A | ||||
| JP8264530A |
Foreign References:
| US5407698 |
Attorney, Agent or Firm:
Akihiro Asai