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Patent Searching and Data


Title:
受光素子
Document Type and Number:
Japanese Patent JP4338542
Kind Code:
B2
Abstract:

To improve sensitivity by enhancing sensitivity of a light-receiving element and efficiently receiving a light of short wavelength of blue or purple-blue.

In a pn-type or a pin-type light-receiving element, a high-concentration one conductivity-type impurity layer and a reverse conductivity-type impurity layer are formed on a lightly-doped semiconductor substrate, the heavily-doped layer of one conductivity type is arranged on a surface of the substrate, and a light-receiving region of fixed region is formed. In the light-receiving element, a plurality of low-concentration layer exposed regions, wherein the lightly-doped layer of the semiconductor substrate is exposed on the surface of the substrate are formed in the light-receiving region. These low-concentration layer exposed regions are dispersed and arranged in the light-receiving region.

COPYRIGHT: (C)2005,JPO&NCIPI


Inventors:
Shoji Inaba
Shinya Nishimura
Application Number:
JP2004030008A
Publication Date:
October 07, 2009
Filing Date:
February 06, 2004
Export Citation:
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Assignee:
Sanyo Electric Co., Ltd.
Sanyo Electric Consumer Electronics Co., Ltd.
International Classes:
H01L31/10
Domestic Patent References:
JP62018774A
JP1278783A
JP2001068719A
JP55151375A
JP58196066A
JP59004182A
JP59124177A
JP60059787A
JP61231776A
JP2026082A
JP2000252512A
JP2001320075A
Attorney, Agent or Firm:
Hiroshi Kakutani