Title:
シリコン薄膜用珪素含有CVD原料、該原料の選定方法、並びに該原料を用いたシリコン薄膜の製膜方法
Document Type and Number:
Japanese Patent JP4343656
Kind Code:
B2
Inventors:
Maki Hoshikawa
Kentaro Hirai
Eiji Tanaka
Kentaro Hirai
Eiji Tanaka
Application Number:
JP2003384656A
Publication Date:
October 14, 2009
Filing Date:
November 14, 2003
Export Citation:
Assignee:
Mitsui Chemicals, Inc.
International Classes:
C23C16/24
Domestic Patent References:
| JP5259089A | ||||
| JP1172295A | ||||
| JP6080413A |
Foreign References:
| US5013690 |
Other References:
L. M. Atagi et al. ,Homoleptic tin and silicon amido compounds as precursors for low-temperature atmospheric pressure chemical vapor deposition of tin and silicon oxide thin films,Chem. Mater. ,米国,American Chemical Society,1994年 4月,Vol. 6, No. 4,pp. 360-361
Attorney, Agent or Firm:
Shinji Hayami
Koji Sato
Koji Sato
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