Title:
炭化珪素半導体装置
Document Type and Number:
Japanese Patent JP4356764
Kind Code:
B2
Abstract:
A SiC semiconductor device includes: a SiC substrate; a SiC drift layer on the substrate having an impurity concentration lower than the substrate; a semiconductor element in a cell region of the drift layer; an outer periphery structure including a RESURF layer in a surface portion of the drift layer and surrounding the cell region; and an electric field relaxation layer in another surface portion of the drift layer so that the electric field relaxation layer is separated from the RESURF layer. The electric field relaxation layer is disposed on an inside of the RESURF layer so that the electric field relaxation layer is disposed in the cell region. The electric field relaxation layer has a ring shape.
More Like This:
| WO/1999/023704 | SEMICONDUCTOR COMPONENT |
| JP2023048630 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| JPS63272080 | SEMICONDUCTOR DEVICE |
Inventors:
Takeo Yamamoto
Eiichi Okuno
Eiichi Okuno
Application Number:
JP2007109223A
Publication Date:
November 04, 2009
Filing Date:
April 18, 2007
Export Citation:
Assignee:
株式会社デンソー
International Classes:
H01L29/47; H01L29/872
Domestic Patent References:
| JP2003158259A | ||||
| JP60074481A |
Attorney, Agent or Firm:
Yoji Ito
Takahiro Miura
Fumihiro Mizuno
Takahiro Miura
Fumihiro Mizuno