残膜率を調節できるフォトレジストパターンの形成方法

Title:

残膜率を調節できるフォトレジストパターンの形成方法

Document Type and Number:

Japanese Patent JP4364489

Kind Code:

B2

Abstract:

A photoresist composition may include formulas 1 and 2:where R is an acetal group or a ter-butyloxy carbonyl (t-BOC) group, n and m are integers, n/(m+n) is 0.01-0.8, and m/(m+n) is 1-[n/(m+n)],where r is an integer between 8-40.A method for forming photoresist patterns may include forming a photoresist layer on a semiconductor substrate and exposing and developing the photoresist layer using a mask pattern that includes first areas having a light transmissivity of about 100% and second areas having a light transmissivity of between about 10% and about 30%.

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Inventors:

Lee Dai Yop
Southern court forest
Willow
Lee Yi Yu

Application Number:

JP2002232027A

Publication Date:

November 18, 2009

Filing Date:

August 08, 2002

Export Citation:

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Assignee:

SAMSUNG ELECTRONICS CO.,LTD.

International Classes:

G03F7/039; C08F212/14; G03F1/14; G03F1/50; G03F7/004; G03F7/30; G03F7/32; G03F7/40; H01L21/027

Domestic Patent References:

JP11153869A
JP5232704A
JP10254138A
JP8160622A
JP6295875A

Attorney, Agent or Firm:

Masatake Shiga
Takashi Watanabe

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