Title:
半導体装置
Document Type and Number:
Japanese Patent JP4393529
Kind Code:
B2
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JPH11283396 | MEMORY DEVICE |
JP2011065693 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE |
JP2003217287 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE |
Inventors:
Yasuhiko Honda
Hideo Kato
Eitoshi Saito
Masao Kuriyama
Tokumasa Hara
Naofumi Ikeda
Tatsuya Hiramatsu
Hideo Kato
Eitoshi Saito
Masao Kuriyama
Tokumasa Hara
Naofumi Ikeda
Tatsuya Hiramatsu
Application Number:
JP2007062620A
Publication Date:
January 06, 2010
Filing Date:
March 12, 2007
Export Citation:
Assignee:
Toshiba Corporation
Toshiba Memory Systems Co., Ltd.
Toshiba Memory Systems Co., Ltd.
International Classes:
G11C16/02; G11C16/06
Domestic Patent References:
JP7281952A | ||||
JP8329695A | ||||
JP10144086A | ||||
JP11086576A |
Attorney, Agent or Firm:
Masaru Itami