Title:
ダイヤモンド表面上の原子的平坦面の選択的形成方法、そのダイヤモンド基板及びこれを用いた半導体素子
Document Type and Number:
Japanese Patent JP4446065
Kind Code:
B2
Abstract:
[Object] The present invention provides a method of selectively forming a flat plane on an atomic level on a diamond (001), (110) or (111) surface. [Means for Solving Problems] A method of selectively forming a flat plane on a diamond surface comprising growing diamond on a stepped diamond surface of any of crystal structures (001), (110) and (111) by CVD (Chemical Vapor Deposition) under growth conditions such that step-flow growth of diamond is carried out thereafter.
Inventors:
Norio Tokuda
Hitoshi Umezawa
Satoshi Yamazaki
Hitoshi Umezawa
Satoshi Yamazaki
Application Number:
JP2008515473A
Publication Date:
April 07, 2010
Filing Date:
April 23, 2007
Export Citation:
Assignee:
National Institute of Advanced Industrial Science and Technology
International Classes:
C23C16/27; C23C16/511; C30B29/04; H01L21/205
Other References:
Hideyuki WATANABE et al.,Homoepitaxial diamond film with an atomically flat surface over a large area,Diamond and Related Materials,1999年,Volume 8, Issue 7,pp. 1272-1276
Toshiharu MAKINO et al.,Strong Excitonic Emission from (001)-Oriented Diamond P-N Junction,Japanese Journal of Applied Physics,2005年,Vol. 44, No. 38,pp. L1190-L1192
Toshiharu MAKINO et al.,Strong Excitonic Emission from (001)-Oriented Diamond P-N Junction,Japanese Journal of Applied Physics,2005年,Vol. 44, No. 38,pp. L1190-L1192