Title:
薄膜回路の形成方法
Document Type and Number:
Japanese Patent JP4452878
Kind Code:
B2
Inventors:
Osamu Noda
Hidekazu Nakajima
Hidekazu Nakajima
Application Number:
JP2004105446A
Publication Date:
April 21, 2010
Filing Date:
March 31, 2004
Export Citation:
Assignee:
Kinki High Energy Processing Technology Research Institute
Nissei Chemical Plating Co., Ltd.
Nissei Chemical Plating Co., Ltd.
International Classes:
C23C18/20; C23C18/22; C23C18/38; H05K3/18
Domestic Patent References:
JP6087964A | ||||
JP2003027250A | ||||
JP2003145561A | ||||
JP11043545A | ||||
JP11291392A | ||||
JP7196826A | ||||
JP5043664A | ||||
JP9067508A | ||||
JP9031309A | ||||
JP2003183840A | ||||
JP2305969A | ||||
JP63179079A | ||||
JP2002335065A |
Attorney, Agent or Firm:
Tadashi Fujikawa