相補型不揮発性メモリ素子、その動作方法、その製造方法、及びそれを含む論理素子、並びに半導体装置とその読み込み動作回路

Title:

相補型不揮発性メモリ素子、その動作方法、その製造方法、及びそれを含む論理素子、並びに半導体装置とその読み込み動作回路

Document Type and Number:

Japanese Patent JP4542469

Kind Code:

B2

Abstract:

Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device comprising the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship.

More Like This:

JP2004356428	NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
JP5535227	Non-volatile semiconductor memory
JP2007242216	MEMORY DEVICE AND METHOD FOR OPERATING THE SAME

Inventors:

Park Yoong
Lee Trillion
Gold chastity rain
Lee Yin Hong
Xu Jun love
Gold pillar
Cai Hei
Cai Soo Ji
Song Toshinori

Application Number:

JP2005178652A

Publication Date:

September 15, 2010

Filing Date:

June 17, 2005

Export Citation:

Click for automatic bibliography generation Help

Assignee:

SAMSUNG ELECTRONICS CO.,LTD.

International Classes:

H01L21/8247; G11C11/56; G11C16/04; G11C16/28; H01L27/06; H01L27/115; H01L29/788; H01L29/792

Domestic Patent References:

JP6077500A
JP2003338559A
JP6125091A
JP2003152192A
JP11284500A
JP2001110916A

Foreign References:

WO2003017285A1
US20030030074
US5306935

Attorney, Agent or Firm:

Isono Dozo
Etsuo Tada

Previous Patent: 曲げ加工性に優れた溶融Ｚｎ−Ａｌ−Ｍｇ系めっき鋼板の製造方法

Next Patent: 吸気ダクト