Title:
シリコン用の異方性のフッ素ベースのプラズマエッチング法
Document Type and Number:
Japanese Patent JP4555404
Kind Code:
B2
Abstract:
A method for anisotropic plasma etching of laterally defined patterns in a silicon substrate is described. Protective layers made of at least one silicon compound with a second reaction partner that is entirely compatible with the chemistry of the etching process are deposited before and/or during plasma etching onto the sidewalls of the laterally defined patterns.
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Inventors:
Franz Römer
Andrea Silp
Andrea Silp
Application Number:
JP53614598A
Publication Date:
September 29, 2010
Filing Date:
February 13, 1998
Export Citation:
Assignee:
ROBERT BOSCH GMBH
International Classes:
H01L21/302; H01L21/3065
Domestic Patent References:
| JP2260424A | ||||
| JP4303929A | ||||
| JP6188224A | ||||
| JP2181922A | ||||
| JP9036091A | ||||
| JP3142830A | ||||
| JP5082636A | ||||
| JP5118825A | ||||
| JP6163478A | ||||
| JP6349784A | ||||
| JP8330414A | ||||
| JP7503815A | ||||
| JP3129730A |
Attorney, Agent or Firm:
Toshio Yano
Toshiomi Yamazaki
Takuya Kuno
Hiroshi Sugimoto
Kimihiro Hoshi
Hiroyasu Ninomiya
Einzel Felix-Reinhard
Toshiomi Yamazaki
Takuya Kuno
Hiroshi Sugimoto
Kimihiro Hoshi
Hiroyasu Ninomiya
Einzel Felix-Reinhard