Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4558262
Kind Code:
B2
Abstract:
An operating semiconductor layer is formed in such a manner that amorphous silicon layer is formed to be shaped so that it has a wide region and a narrow region and the narrow region is connected to the wide region at a position asymmetric to the wide region, and the amorphous silicon layer is crystallized by scanning a CW laser beam from the wide region toward the narrow region in a state that a polycrystalline silicon layer as a heat-retaining layer encloses the narrow region from a side face through the silicon oxide layer.
Inventors:
Akito Hara
Yasuyuki Sano
Nobuo Sasaki
Michiko Takei
Yasuyuki Sano
Nobuo Sasaki
Michiko Takei
Application Number:
JP2002180425A
Publication Date:
October 06, 2010
Filing Date:
June 20, 2002
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L21/20; H01L21/336; H01L29/786
Domestic Patent References:
| JP2001144300A | ||||
| JP200068525A | ||||
| JP2001144302A | ||||
| JP59161014A | ||||
| JP59102890A | ||||
| JP6147627A | ||||
| JP11214700A | ||||
| JP4165613A | ||||
| JP927453A |
Attorney, Agent or Firm:
Takayoshi Kokubun