To provide a manufacturing method of a semiconductor device having a semiconductor film having small unevenness on the surface.
The manufacturing method of the semiconductor device includes a process for arranging a semiconductor film 13 on the surface of a base film, a protective film arrangement process for arranging a protective film 14 on the surface of the semiconductor film 13, and a process for melting a part of the semiconductor film 13 in a thickness direction by irradiating a laser beam locally from the upper part of the protective film 14. Furthermore, the method includes a crystallization process for forming a crystal which has the longitudinal direction almost parallel to the surface of the semiconductor film 13 by cooling a part of the molten semiconductor film 13; and a flattening process for making the semiconductor film 13 flat in a state that the protective film 14 is arranged on the surface of the semiconductor film 13. The crystallization process includes a process wherein the emerging projection 17 of the semiconductor film 13 runs through the protective film 14. The flattening process includes a process for removing at least a part of the projection 17.
COPYRIGHT: (C)2007,JPO&INPIT
Masanori Seki
Junichiro Nakayama
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Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai