Title:
半導体エネルギー検出器
Document Type and Number:
Japanese Patent JP4641103
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor energy detector that can quickly transfer charges, and inhibits generation of blooming due to excessive charges. SOLUTION: In the back irradiated semiconductor energy detector having a thin section where the back side of a substrate is thinned, auxiliary wirings 21 to 23 are provided at the upper section of a group of vertical transfer electrodes provided at the surface side of a light reception section 1a where a plurality of vertical transfer channels 6 and an overflow drain 12 are formed. The auxiliary wirings 21 to 23 supply a transfer voltage to the transfer electrode for reducing the resistance of the transfer electrode. At the same time, wiring 30 connected to the overflow drain 12 for discharging the excessive charge from the overflow drain 12 is formed with a wiring pattern along the auxiliary wirings 21 to 23.
Inventors:
Hiroshi Akahori
Masaharu Muramatsu
Ichinose Masatoshi
Masaharu Muramatsu
Ichinose Masatoshi
Application Number:
JP2001022145A
Publication Date:
March 02, 2011
Filing Date:
January 30, 2001
Export Citation:
Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
H01L27/14; H01L27/148; H04N5/32
Domestic Patent References:
| JP2000294760A | ||||
| JP6326932A | ||||
| JP8222721A | ||||
| JP2000196063A | ||||
| JP11204770A |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Tatsuya Shioda
Shiro Terasaki
Tatsuya Shioda
Shiro Terasaki