可変抵抗素子 - Seiko Epson Corporation

Title:

可変抵抗素子

Document Type and Number:

Japanese Patent JP4655021

Kind Code:

B2

Abstract:

To provide a new variable resistance element capable of applying it to such a resistance varying type memory as RRAM.

The variable resistance element 10 includes a first electrode 12, a resistor layer 14 formed on the first electrode 12, and a second electrode 16 formed on the resistor layer 14. The resistor layer 14 is made of a transition metal oxide represented by the formula of YxA1-xO2(0≤x≤0.3), and A represents at least two kinds of transition metal elements having different work functions from each other. The transition metal oxide has oxygen defects.

Inventors:

Hiroshi Miyazawa

Application Number:

JP2006278611A

Publication Date:

March 23, 2011

Filing Date:

October 12, 2006

Export Citation:

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Assignee:

Seiko Epson Corporation

International Classes:

H01L27/105; H01L45/00

Domestic Patent References:

JP2006245322A
JP2009517864A
JP2007273548A
JP2004241396A
JP2008541452A
JP2006324480A

Attorney, Agent or Firm:

Yukio Fuse
Mitsue Obuchi

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