Title:
密閉キャビティ内にガス相を充填する方法、及び、密閉キャビティ内にガス相を有する構造体の製造方法
Document Type and Number:
Japanese Patent JP4657392
Kind Code:
B2
Abstract:
A method for injecting a gas into a closed cavity consists in bombarding a semiconductor substrate containing the cavity (10) with a hydrogen or helium ion beam. The substrate is made of monocrystalline silicon covered by polycrystalline silicon and an oxide layers. A hole (14) is made in the layer structure, by lithography. The cavity (15) inside the substrate has a disc shape and is obtained by chemical etching. A new oxide layer (16) covers the hole and the cavity. Hydrogen or rare gas ions are then implanted into the substrate so that the maximum ion concentration is obtained inside the cavity.
Inventors:
Michelle bruel
Application Number:
JP33330797A
Publication Date:
March 23, 2011
Filing Date:
December 03, 1997
Export Citation:
Assignee:
INSERM(INSTITUT NATIONAL DE LA SANTE ET DE LA RECHERCHE MEDICALE)
International Classes:
F17C6/00; G01L9/00
Domestic Patent References:
| JP5211128A | ||||
| JP8111453A | ||||
| JP2262032A | ||||
| JP7115209A |
Attorney, Agent or Firm:
Yasuhiko Murayama
Masatake Shiga
Takashi Watanabe
Shinya Mitsuhiro
Masatake Shiga
Takashi Watanabe
Shinya Mitsuhiro