Title:
サブクオーターミクロン適用のための、メタライゼーションに先立つ予備洗浄方法
Document Type and Number:
Japanese Patent JP4681117
Kind Code:
B2
Abstract:
The present invention generally provides a precleaning process prior to metallization for submicron features on substrates. The method includes cleaning the submicron features with radicals from a plasma of a reactive gas such as oxygen, a mixture of CF4/O2, or a mixture of He/NF3, wherein the plasma is preferably generated by a remote plasma source and the radicals are delivered to a chamber in which the substrate is disposed. Native oxides remaining in the submicron features are preferably reduced in a second step by treatment with radicals from a plasma containing hydrogen. Following the first or both precleaning steps, the features can be filled with metal by available metallization techniques which typically include depositing a barrier/liner layer on exposed dielectric surfaces prior to deposition of aluminum, copper, or tungsten. The precleaning and metallization steps can be conducted on available integrated processing platforms.
Inventors:
Subramanyan Suchitra
Chen Li An You
Moseley Rhoderick Craig
Chen Li An You
Moseley Rhoderick Craig
Application Number:
JP2000526963A
Publication Date:
May 11, 2011
Filing Date:
November 02, 1998
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L21/28; C23C14/02; C23C16/02; H01L21/285; H01L21/302; H01L21/304; H01L21/3065; H01L21/768
Domestic Patent References:
| JP8045912A | ||||
| JP4229621A | ||||
| JP6069168A | ||||
| JP5234973A | ||||
| JP9205070A | ||||
| JP4206719A |
Attorney, Agent or Firm:
Minoru Nakamura
Fumiaki Otsuka
Sadao Kumakura
Shishido Kaichi
Hideto Takeuchi
Toshio Imajo
Nobuo Ogawa
Village shrine Atsuo
Takaki Nishijima
Atsushi Hakoda
Fumiaki Otsuka
Sadao Kumakura
Shishido Kaichi
Hideto Takeuchi
Toshio Imajo
Nobuo Ogawa
Village shrine Atsuo
Takaki Nishijima
Atsushi Hakoda