Title:
単結晶の熱処理方法
Document Type and Number:
Japanese Patent JP4770337
Kind Code:
B2
Abstract:
A single crystal heat treatment method having a step of heating a single crystal of a specific cerium-doped silicate compound in an oxygen-poor atmosphere at a temperature T1 (units: ° C.) that satisfies the conditions represented by formula (3) below 800≰T1<(Tm1−550) (3) (wherein Tm1 (units: ° C.) represents the melting point of the single crystal).
Inventors:
Tatsuya Usui
Naoaki Shimura
Yasushi Kurata
Kazuo Kurashige
Naoaki Shimura
Yasushi Kurata
Kazuo Kurashige
Application Number:
JP2005251886A
Publication Date:
September 14, 2011
Filing Date:
August 31, 2005
Export Citation:
Assignee:
Hitachi Chemical Co., Ltd.
International Classes:
C30B33/02; C09K11/00; C09K11/08; C09K11/79; C30B29/34
Domestic Patent References:
| JP4321600A | ||||
| JP2001524163A | ||||
| JP6100360A | ||||
| JP2064008A |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Shiro Terasaki
Ryugo Akahori
Shiro Terasaki
Ryugo Akahori