プラズマCVD方法及び装置

Title:

プラズマCVD方法及び装置

Document Type and Number:

Japanese Patent JP4778700

Kind Code:

B2

More Like This:

JP2011157272	METHOD FOR FORMING GALLIUM NITRIDE SEMICONDUCTOR LAYER ON WEAK POST, AND GALLIUM NITRIDE SEMICONDUCTOR STRUCTURE MANUFACTURED THEREBY
JP2000100734	HEATER HEAT-REMOVER AND FILM-FORMING EQUIPMENT
JPS61187388	MANUFACTURE OF SEMICONDUCTOR LASER

Inventors:

Masashi Kikuchi
Yosuke Jimbo
Wakamatsu Teiji

Application Number:

JP2004315714A

Publication Date:

September 21, 2011

Filing Date:

October 29, 2004

Export Citation:

Assignee:

ULVAC, Inc.

International Classes:

H01L21/205; C23C16/509; H01L21/31

Domestic Patent References:

Attorney, Agent or Firm:

Takao Hamano
Teruichi Hirai

Previous Patent: 電池パック

Next Patent: 高周波マルチビームアンテナシステム