Title:
半導体レーザの製造方法、光変調器の製造方法、および光変調器付半導体レーザの製造方法
Document Type and Number:
Japanese Patent JP4786802
Kind Code:
B2
Inventors:
Toru Takiguchi
Application Number:
JP2001020823A
Publication Date:
October 05, 2011
Filing Date:
January 29, 2001
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
G02F1/017; H01S5/227; H01S5/026
Domestic Patent References:
| JP4320083A | ||||
| JP3192789A | ||||
| JP10335751A | ||||
| JP6053614A | ||||
| JP10206808A | ||||
| JP2000208873A | ||||
| JP63072166A | ||||
| JP60207372A | ||||
| JP10107367A | ||||
| JP5190970A | ||||
| JP5055684A | ||||
| JP8097509A |
Attorney, Agent or Firm:
Mamoru Takada
Yoshimi Kuno
Hideki Takahashi
Takuo Tanida
Yoshimi Kuno
Hideki Takahashi
Takuo Tanida