Title:
シリコン製造装置
Document Type and Number:
Japanese Patent JP4805155
Kind Code:
B2
Abstract:
It is an object to provide a silicon manufacturing apparatus that suppresses a silicon deposition to the bottom end portion of the reaction vessel and to a section other than the inside face of the reaction vessel except for the bottom end portion, thereby enabling a stable operation for a long time, for a silicon manufacturing apparatus that introduces a reaction gas to the inside wall of the heated reaction vessel to deposit silicon and that withdraws the deposited silicon from an opening at the bottom end portion of the reaction vessel. A first gas supply port 31 that is formed by a circular slit and that supplies a sealing gas and/or an etching gas to the bottom end portion is formed on the peripheral side around the bottom end portion of the reaction vessel. In addition, a second gas supply port 33 is formed at the position separate from the first gas supply port 31, and a sealing gas and/or an etching gas are supplied from the second gas supply port 33 to a wall face of the member forming the first gas supply port 31 at the outside periphery of the first gas supply port 31.
Inventors:
Junichiro Nakajima
Satoshi Wakamatsu
Shigeki Sugimura
Satoshi Wakamatsu
Shigeki Sugimura
Application Number:
JP2006531703A
Publication Date:
November 02, 2011
Filing Date:
August 10, 2005
Export Citation:
Assignee:
Tokuyama Corporation
International Classes:
C01B33/03
Domestic Patent References:
| JP2002029726A | 2002-01-29 | |||
| JP2003002626A | 2003-01-08 | |||
| JP2003002627A | 2003-01-08 | |||
| JP2003002628A | 2003-01-08 | |||
| JP2003054933A | 2003-02-26 | |||
| JP2004002138A | 2004-01-08 |
Attorney, Agent or Firm:
Koji Makimura
Chihata Takahata
Toru Suzuki
Chihata Takahata
Toru Suzuki