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Title:
有機薄膜トランジスタ
Document Type and Number:
Japanese Patent JP4871302
Kind Code:
B2
Abstract:

To provide techniques for discriminating combinations of electrodes and organic semiconductors of organic TFTs which are improved in electron injection efficiency and hole injection efficiency, to actualize two kinds of TFTs which are n-channel TFTs and p-channel TFTs, and further to provide complementary organic thin film transistor (organic CTFT) and an organic CTFT array forming desired arbitrary circuit constitution with organic CTFTs.

Only surface modifications of an electrode and an insulating film are selectively changed, without changing TFT materials, by using a mathematical expression values of differences in Fermi energy on a semiconductor-electrode interface and a semiconductor-gate insulator interface to actualize n-type and p-type TFTs. An arbitrary circuit is constituted by connecting all of source electrodes and gate electrodes of p-type channel TFTs and drain electrodes and gate electrodes of n-type channel TFTs, performing processes for the surface modifications, and then disconnecting unnecessary wiring by light irradiation etc.

COPYRIGHT: (C)2009,JPO&INPIT


Inventors:
Tomihiro Hashizume
Arai Yui
Takeo Shiba
Yuji Suwa
Application Number:
JP2008001024A
Publication Date:
February 08, 2012
Filing Date:
January 08, 2008
Export Citation:
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Assignee:
株式会社日立製作所
International Classes:
H01L29/786; H01L21/28; H01L21/336; H01L21/8238; H01L27/08; H01L27/092; H01L29/417; H01L51/05
Domestic Patent References:
JP2005268721A
JP2007157752A
JP200771928A
Attorney, Agent or Firm:
Polaire Patent Business Corporation



 
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