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Title:
トランジスタを用いないランダムアクセスメモリ
Document Type and Number:
Japanese Patent JP4932140
Kind Code:
B2
Abstract:
A memory core includes a bit line and a word line. The memory core also includes a core cell in electrical communication with the word line and the bit line. The core cell includes a threshold changing material. The threshold changing material is programmed to enable access to the core cell based upon a voltage applied to the word line. Methods for accessing a memory core cell also are described.

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Inventors:
Chen Yifeng
Cai Bun Tetsu
Roh
Application Number:
JP2004148081A
Publication Date:
May 16, 2012
Filing Date:
May 18, 2004
Export Citation:
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Assignee:
Muang Hong Electronic Co., Ltd.
International Classes:
G11C13/00; G11C11/00; G11C11/34; G11C16/02; H01L27/10; H01L27/112; H01L27/24
Domestic Patent References:
JP11097556A
JP2000101034A
JP63142690A
JP2000132961A
JP5508056A
JP2003151182A
JP10511814A
JP63150980A
Foreign References:
WO2002005287A1
WO2004055828A2
EP1318552A1
Attorney, Agent or Firm:
Kunihiko Shiromura
Tsuyoshi Kumano
Hideka Tanaka



 
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