Title:
独立(Al、Ga、In)Nを形成するための分割方法および装置
Document Type and Number:
Japanese Patent JP4958833
Kind Code:
B2
Abstract:
An apparatus adapted to perform crystal growth and in situ laser parting, the apparatus comprising: a growth reactor including a pedestal adapted to support a sacrificial template, the pedestal being adapted to permit transmission of a laser beam; and a laser operatively coupled with the growth reactor to transmit a laser beam through the pedestal. Such apparatus may be used in a method for producing (Al,Ga,In)N material suitable for fabrication of microelectronic or optoelectronic devices.
Inventors:
Baud, Robert, Pea.
Brandes, George, Earl.
Ticheller, Michael, A.
Kelly, Michael, Kay.
Brandes, George, Earl.
Ticheller, Michael, A.
Kelly, Michael, Kay.
Application Number:
JP2008103245A
Publication Date:
June 20, 2012
Filing Date:
April 11, 2008
Export Citation:
Assignee:
CREE INC.
International Classes:
C30B29/38; C23C16/01; C23C16/34; C30B25/02; C30B25/18; C30B33/00; H01L21/205; H01L33/00
Domestic Patent References:
| JP2001176813A | ||||
| JP2001200366A | ||||
| JP2000228539A |
Foreign References:
| WO2001023648A1 | ||||
| WO2001068955A1 |
Attorney, Agent or Firm:
Patent Service Corporation Patent Office Sykes
Shinji Oga
Shinji Oga