Title:
ゲルマニウム膜の形成方法
Document Type and Number:
Japanese Patent JP4982355
Kind Code:
B2
Abstract:
A method comprises, in a reaction chamber, depositing a seed layer of germanium over a silicon-containing surface at a first temperature. The seed layer has a thickness between about one monolayer and about 1000 Å. The method further comprises, after depositing the seed layer, increasing the temperature of the reaction chamber while continuing to deposit germanium. The method further comprises holding the reaction chamber in a second temperature range while continuing to deposit germanium. The second temperature range is greater than the first temperature.
Inventors:
Bower matias
Brabant Paul Dee.
Landin Trevan
Brabant Paul Dee.
Landin Trevan
Application Number:
JP2007501016A
Publication Date:
July 25, 2012
Filing Date:
February 25, 2005
Export Citation:
Assignee:
ASM America Inc.
International Classes:
H01L21/205; C23C16/28; H01L21/20; H01L21/30; H01L21/46
Domestic Patent References:
| JP2002525255A | ||||
| JP6232057A | ||||
| JP5326467A | ||||
| JP2002050579A | ||||
| JP10072283A |
Other References:
H. Lafontaine, B. F. Mason, S. J. Rolfe, D. D. Perovic, and B. Bahierathan,Epitaxy of Si/Si1-xGex heterostructures with very small roughness using a production-compatible ultrahigh vacuum-chemical vapor deposition reactor,J. Vac. Sci. Technol. B,米国,1998年 3月,Vol.16 No.2,Page.599-604
T. Spila, P. Desjardins, J. D'Arcy-Gall, R. D. Twesten, and J. E. Greene,Effect of steady-state hydrogen coverage on the evolution of crosshatch morphology during Si1-xGex/Si(001) growth from hydride precursors,J. Appl. Phys. ,米国,2003年 2月15日,Vol.93 No.4,Page.1918-1925
T. Spila, P. Desjardins, J. D'Arcy-Gall, R. D. Twesten, and J. E. Greene,Effect of steady-state hydrogen coverage on the evolution of crosshatch morphology during Si1-xGex/Si(001) growth from hydride precursors,J. Appl. Phys. ,米国,2003年 2月15日,Vol.93 No.4,Page.1918-1925
Attorney, Agent or Firm:
Fumihiko Yagisawa
Suzuki Masao
Suzuki Masao