To provide a solid-state image element, formed without producing defects in shape and residues, while thinning and comprising a color filter having reflectivity that does not have dispersion between pixels, and to provide its manufacturing process.
In the fabrication process of a solid state image sensor comprising photoelectric conversion elements arranged two-dimensionally on a semiconductor substrate, a color filter having filter patterns of a plurality of colors arranged on the semiconductor substrate, in correspondence with respective photoelectric conversion elements, and a planarization layer formed partially or entirely on the semiconductor substrate, unwanted part of at least the color filter pattern being formed at first out of the filter patterns of a plurality of colors and the underlying planarization layer are patterned by dry etching and other color filter patterns are patterned through photolithography.
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