Title:
窒化物半導体発光装置
Document Type and Number:
Japanese Patent JP5108532
Kind Code:
B2
Abstract:
A nitride semiconductor light-emitting device according to the present invention includes a nitride based semiconductor substrate 10 and a nitride based semiconductor multilayer structure that has been formed on the semiconductor substrate 10. The multilayer structure includes an active layer 16 that produces emission and multiple semiconductor layers 12, 14 and 15 that have been stacked one upon the other between the active layer 16 and the substrate 10 and that include an n-type dopant. Each and every one of the semiconductor layers 12, 14 and 15 includes Al atoms.
Inventors:
Akihiko Ishibashi
Toshiya Yokokawa
Toshiya Yokokawa
Application Number:
JP2007554909A
Publication Date:
December 26, 2012
Filing Date:
January 17, 2007
Export Citation:
Assignee:
Panasonic Corporation
International Classes:
H01S5/343; H01L33/32; H01S5/22
Domestic Patent References:
| JP2002134822A | 2002-05-10 | |||
| JP2004087564A | 2004-03-18 | |||
| JP2003101113A | 2003-04-04 | |||
| JP2005191306A | 2005-07-14 | |||
| JP2000340892A | 2000-12-08 | |||
| JP2003115642A | 2003-04-18 | |||
| JP2005353690A | 2005-12-22 |
Attorney, Agent or Firm:
Seiji Okuda