Title:
半導体装置及びその製造方法
Document Type and Number:
Japanese Patent JP5194805
Kind Code:
B2
Abstract:
The semiconductor device includes the concentration of the impurity of the first conductivity type in a doped channel layer of a first conductivity type in the pass transistor is set at a relatively low value, and pocket regions of the first conductivity type in a pass transistor are formed so as to be relatively shallow with a relatively high impurity concentration.
Inventors:
Akihiro Hasushima
Hideyuki Kojima
Hideyuki Kojima
Application Number:
JP2008001220A
Publication Date:
May 08, 2013
Filing Date:
January 08, 2008
Export Citation:
Assignee:
Fujitsu Semiconductor Limited
International Classes:
H01L21/8234; H01L27/088
Domestic Patent References:
| JP2007281027A | ||||
| JP2000150885A | ||||
| JP9270466A | ||||
| JP2005268817A | ||||
| JP2004039814A | ||||
| JP2009124011A | ||||
| JP2003031682A |
Attorney, Agent or Firm:
Yoshito Kitano