Title:
固体撮像装置
Document Type and Number:
Japanese Patent JP5302073
Kind Code:
B2
Abstract:
In a solid-state imaging device 1, an overflow gate (OFG) 5 has a predetermined electric resistance value, while voltage application units 16, to 16 5 are electrically connected to the OFG 5 at connecting parts 17 1 to 17 5 . Therefore, when voltage values V1 to V5 applied to the connecting parts 17 1 to 17 5 by the voltage application units 16 1 to 16 5 are adjusted, the OFG 5 can yield higher and lower voltage values in its earlier and later stage parts, respectively. As a result, the barrier level (potential) becomes lower and higher in the earlier and later stage parts, so that all the electric charges generated in an earlier stage side region of photoelectric conversion units 2 can be caused to flow out to an overflow drain (OFD) 4, whereby only the electric charges generated in a later stage side region of the photoelectric conversion units 2 can be TDI-transferred.
Inventors:
Hisanori Suzuki
Yasuto Yoneda
Kentaro Maeda
Masaharu Muramatsu
Yasuto Yoneda
Kentaro Maeda
Masaharu Muramatsu
Application Number:
JP2009089157A
Publication Date:
October 02, 2013
Filing Date:
April 01, 2009
Export Citation:
Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
H01L27/148; H04N5/335; H04N5/369; H04N5/372
Domestic Patent References:
| JP2002231914A | ||||
| JP2003521837A | ||||
| JP2006064197A |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Shiro Terasaki
Satoru Ishida
Kenichi Shibayama
Shiro Terasaki
Satoru Ishida
Kenichi Shibayama