酸化物薄膜の形成方法

Japanese Patent JP5306723

B2

To provide a method for forming a thin film of an oxide which retains the orientation of a metal substrate.

The method includes the step of vapor-depositing a material made of a metal or a metal oxide on a heated, orientated metal substrate in an atmosphere containing oxygen, with an electron-beam evaporation technique. The above vapor-deposition step is conducted by setting a partial pressure of water vapor in the atmosphere at 1×10-4Pa or lower, and by controlling at least one of a partial pressure of oxygen in the atmosphere and a film-forming temperature.

COPYRIGHT: (C)2010,JPO&INPIT

Ryusuke Nakazaki
Masayasu Kasahara
Masakazu Matsui

JP2008170946A

October 02, 2013

June 30, 2008

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THE FURUKAW ELECTRIC CO.,LTD.
International Superconductivity Industrial Technology Research Center

C23C14/30; C23C14/08; H01B13/00; H01B12/06

JP9064206A
JP2005001935A

CUI,X. et al,Reel-to-Reel Continuous Deposition of Epitaxial CeO2 Buffer Layers on Biaxially Textured Ni Tapes by Electron Beam Evaporation. ,IEEE Transactions on Applied Superconductivity,1999年,Vol.9,p.1967-1970

Kurata Masatoshi
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Tetsuya Kazama
Katsumura Hiro
Shoji Kawai
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori
Takuzo Ichihara
Yamashita Gen

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