Title:
ALD法又はCVD法による金属含有膜の調製
Document Type and Number:
Japanese Patent JP5307513
Kind Code:
B2
Abstract:
Methods for the deposition via chemical vapor deposition or atomic layer deposition of metal containing films, such as, for example, metal silicate or metal silicon oxynitride films are described herein. In one embodiment, the method for depositing a metal-containing film comprises the steps of introducing into a reaction chamber, a metal amide precursor, a silicon-containing precursor, and an oxygen source wherein each precursor is introduced after introducing a purge gas.
Inventors:
Kim Min-Kyun
Kim Mu-Sun
Xin Chen Lei
Yangsan-Hyun
Kim Mu-Sun
Xin Chen Lei
Yangsan-Hyun
Application Number:
JP2008287732A
Publication Date:
October 02, 2013
Filing Date:
November 10, 2008
Export Citation:
Assignee:
AIR PRODUCTS AND CHEMICALS INCORPORATED
International Classes:
H01L21/283; H01L21/316; H01L21/336; H01L21/768; H01L23/532; H01L29/78
Domestic Patent References:
| JP2008007471A | ||||
| JP2006316316A | ||||
| JP2004247474A | ||||
| JP2004228585A | ||||
| JP2004529495A | ||||
| JP2005534173A | ||||
| JP2006225764A |
Foreign References:
| WO2005050715A1 | ||||
| WO2006090645A1 |
Attorney, Agent or Firm:
Atsushi Aoki
Takashi Ishida
Tetsuji Koga
Nagasaka Tomoyasu
Atsushi Ebiya
Shunsuke Mima
Takashi Ishida
Tetsuji Koga
Nagasaka Tomoyasu
Atsushi Ebiya
Shunsuke Mima