Title:
導波体を備えるエッジ発光型半導体レーザ
Document Type and Number:
Japanese Patent JP5362306
Kind Code:
B2
Abstract:
The edge-emitting semiconductor laser has a laser radiation (13) that produces an active layer (3), two waveguides (1,2) and two coating layers (4,5). The active layer is embedded in the former waveguide layer. The latter waveguide is provided adjacent to the latter coating layer, in which no active layer is embedded. A third coating layer (6) is arranged at a side of the latter waveguide, which is averted from the former wave guide.
Inventors:
Wolfgang Schmied
Application Number:
JP2008250993A
Publication Date:
December 11, 2013
Filing Date:
September 29, 2008
Export Citation:
Assignee:
Osram Opto Semiconductors GmbH
International Classes:
H01S5/16; H01S5/20
Domestic Patent References:
| JP1100988A | ||||
| JP4237001A | ||||
| JP8236862A | ||||
| JP2310503A | ||||
| JP4079287A | ||||
| JP2003156644A |
Attorney, Agent or Firm:
Toshio Yano
Takuya Kuno
Kimihiro Hoshi
Hiroyasu Ninomiya
Einzel Felix-Reinhard
Takuya Kuno
Kimihiro Hoshi
Hiroyasu Ninomiya
Einzel Felix-Reinhard