To provide a nonvolatile storage having high reliability enabling high integration by substituting the nonvolatile storage for a SRAM used in a switch of a programmable logic such as a FPGA or the like.

The nonvolatile storage includes a first input electrode 101, an output electrode 104, and a second input electrode 107. Further, the nonvolatile storage includes a first variable resistance layer 120 interposed between the first input electrode 101 and the output electrode 104, and a second variable resistance layer 130 interposed between the output electrode 104 and the second input electrode 107. The first variable resistance layer 120 includes a first metal oxide layer 102 and a second metal oxide layer 103, and the second variable resistance layer 130 includes a third metal oxide layer 105 and a fourth metal oxide layer 106.

COPYRIGHT: (C)2010,JPO&INPIT