半導体装置

Japanese Patent JP5456147

B2

PROBLEM TO BE SOLVED: To achieve a high-breakdown-voltage semiconductor device without increasing the element area.SOLUTION: A semiconductor device comprises: a source region along a first direction; a drain region along the first direction located at the opposite side of the source region with a gate electrode interposed therebetween; an element active region part that has an insulator layer having a part facing a lower surface of the gate electrode and provided between the source region and the drain region, a base region having a part facing the lower surface of the gate electrode and provided closer to the source region side than to the insulator layer, and a drift region having a part with a second length in a second direction, facing the lower surface of the gate electrode, and provided closer to the insulator layer side than to the base region; and an element termination region part that has the gate electrode provided on the gate insulating film, the source region, the insulator layer provided so that a part thereof faces the lower surface of the gate electrode, the base region having a part facing the lower surface of the gate electrode and provided closer to the source region side than to the insulator layer, and the drift region having a part facing the lower surface of the gate electrode with a first length shorter than the second length in the first direction and provided closer to the insulator layer side than to the base region.

Manabu Obata
Tomoko Suedai

JP2012263064A

March 26, 2014

November 30, 2012

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Toshiba Corporation

H01L21/336; H01L29/78

JP2003249646A
JP8097411A
JP2001284583A
JP2003060204A
JP2010045137A
JP2009239111A
JP2009252972A
JP2010258355A

US6172401

Masahiko Hinataji

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