Title:
磁気抵抗素子および磁気メモリ
Document Type and Number:
Japanese Patent JP5597899
Kind Code:
B2
Abstract:
The present invention relates to a magnetoresistive element including a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a third magnetic layer. The first magnetic layer includes a magnetic film of MnxGey (77 atm %≰x≰82 atm %, 18 atm %≰y≰23 atm %, x+y=100 atm %). The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third magnetic layer is provided between the first magnetic layer and the first nonmagnetic layer or between the second magnetic layer and the first nonmagnetic layer, or is provided between the first magnetic layer and the first nonmagnetic layer and between the second magnetic layer and the first nonmagnetic layer. The third magnetic layer includes a Heusler alloy. The present invention also relates to a magnetic memory containing the magnetoresistive element.
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Inventors:
加 藤 侑 Mind
Size 坊 忠 臣
north -- River The U. K. 2
落 合 隆 Husband
窪 Rice field 崇 秀
Water Above 成 Beauty
Miyazaki 照 宣
Size 坊 忠 臣
north -- River The U. K. 2
落 合 隆 Husband
窪 Rice field 崇 秀
Water Above 成 Beauty
Miyazaki 照 宣
Application Number:
JP2012208293A
Publication Date:
October 01, 2014
Filing Date:
September 21, 2012
Export Citation:
Assignee:
Toshiba Corp.
Tohoku University, National University Corporation
Tohoku University, National University Corporation
International Classes:
H01L27/105; H01F10/12; H01F10/30; H01F10/32; H01L21/8246; H01L29/82; H01L43/08; H01L43/10
Attorney, Agent or Firm:
Katsunuma Hirohito
Yasukazu Sato
Kawasaki 康
Takeshi Sekine
Akaoka 明
Yasukazu Sato
Kawasaki 康
Takeshi Sekine
Akaoka 明