To provide a thin-film integrated circuit device capable of forming an IC tag that does not cause design of a commodity to deteriorate.

A thin-film integrated circuit device 10A has at least a TFT element A, a capacitive element B and/or a resistive element C on a transparent substrate 1. A gate electrode 2A, a gate insulating film 3A, a semiconductor film 4, a source electrode 6S, and a drain electrode 6D which constitute the TFT element A are all transparent films. A dielectric film 3B, constituting the capacitive element C includes the same material as that of the gate insulating film 3A. One first electrode 2B sandwiching the dielectric film 3B in lamination direction Z includes the same material as the gate electrode 2A. The other second electrode 6B includes the same material as the source electrode 6S and the drain electrode 6D. A resistor film 4C constituting the resistive element C comprises the same material as the semiconductor film 4. A third electrode 6E and a fourth electrode 6F sandwiching the resistor film 4C in the in-plane direction X includes the same material as those of the source electrode 6S and the drain electrode 6F.

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