To provide a thin-film magnetic sensor for miniaturizing the whole magnetic sensor, and having high EDS (Electrostatic-Discharge) endurance of a TMR (Tunneling Magnetoresistive) element not only while being used but also during a manufacturing process.

This thin-film magnetic sensor is constituted as follows. (1) The thin-film magnetic sensor includes a diode substrate including a Zener diode type p-n junction, and a TMR element formed on its surface. (2) The diode substrate includes a semiconductor layer including a p-type semiconductor layer and an n-type semiconductor layer, a first substrate electrode formed on the surface of the semiconductor layer so as to be connected to the n-type semiconductor layer, a second substrate electrode formed on the front surface or the rear surface of the semiconductor layer so as to be connected to the p-type semiconductor layer, and an insulating film formed on a domain other than a domain where the first substrate electrode and the second substrate electrode are exposed, on the surface of the semiconductor layer. (3) The TMR element is formed on the insulating film so that at least one end thereof is connected electrically to the first substrate electrode.

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