Title:
半導体装置の製造方法及び基板処理装置
Document Type and Number:
Japanese Patent JP5632687
Kind Code:
B2
Abstract:
Provided is a method of manufacturing a semiconductor device, including: forming a silicon oxide film on a surface of a substrate holder by repeatedly performing forming a silicon-containing layer on the surface of the substrate holder and oxidizing the silicon-containing layer; forming a thin film on a substrate by using a process gas; removing deposits attached onto the substrate holder by using a fluorine-containing gas; and reforming a silicon oxide film on the surface of the substrate holder after removal of the deposits by repeatedly performing forming a silicon-containing layer on the surface of the substrate holder and oxidizing the silicon-containing layer by using an oxygen-containing gas and a hydrogen-containing gas.
Inventors:
笹島 亮太
▲ひろせ▼ 義朗
赤江 尚徳
笠原 修
▲ひろせ▼ 義朗
赤江 尚徳
笠原 修
Application Number:
JP2010203720A
Publication Date:
November 26, 2014
Filing Date:
September 10, 2010
Export Citation:
Assignee:
株式会社日立国際電気
International Classes:
H01L21/31; C23C16/44
Attorney, Agent or Firm:
Masahiro Fukuoka
Ani store Setsuo
Hitoshi Seino
Ani store Setsuo
Hitoshi Seino