Title:
１２００℃膜抵抗体
Document Type and Number:
Japanese Patent JP5641683
Kind Code:
B2
Abstract:
The method involves applying a plated electric resistive layer (3) on a metallic oxide substrate e.g. sapphire (1). A ceramic intermediate layer i.e. diffusion barrier layer (7), is applied on the resistive layer, and a self-supporting ceramic cover is adhered with a glass-ceramic i.e. passivation layer (10), that is fixed on entire surface of the intermediate layer. The glass-ceramic is doped with metal that is applied in front of the intermediate layer to a cathode of the resistive layer, where the glass-ceramic is electrically conducted beyond 750 degree Celsius. An independent claim is also included for a high-temperature sensor chip comprising an electric resistive layer.
Inventors:
カールハインツ ヴィーナント
トーマス ローゼ
マルギット ザンダー
トーマス ローゼ
マルギット ザンダー
Application Number:
JP2008249692A
Publication Date:
December 17, 2014
Filing Date:
September 29, 2008
Export Citation:
Assignee:
ヘレーウス ゼンゾール テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツングＨｅｒａｅｕｓ Ｓｅｎｓｏｒ Ｔｅｃｈｎｏｌｏｇｙ ＧｍｂＨ
International Classes:
G01K7/18; H01C7/04
Attorney, Agent or Firm:
アインゼル Felix-Reinhardt
Bernard Masako
Takuya Kuno
Bernard Masako
Takuya Kuno